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Power Mosfet 8-SO

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    MPN IRF7809AVTRPBF
    Mfr. Infineon
    Oneyac # A-IRF7809AVTRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 30 V 2.5 W 41 nC Hexfet Power Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Series HEXFET®
    Operating temperature -55°C~150°C(TJ)
    Drain-source voltage Vds 30V
    Input capacitance (Ciss) at different Vds (maximum) 3780pF @ 16V
    Rds On(Max)@Id,Vgs 9mΩ@15A,4.5V
    Gate Charge (Qg) at Different Vgs (Maximum) 62nC @ 5V
    Drive voltage @Rds On (Max), Rds On (Min) 4.5V
    Gate Charge (Qg) at Different Vgs (Maximum) 62nC @ 5V
    Vgs (th) (maximum) at different Ids 1V @ 250µA
    Gate voltage Vgs ±12V
    Package/Enclosure 8-SO
    Pd-power dissipation (Max) 2.5W(Ta)
    fet type N-Channel
    Input capacitance (Ciss) at different Vds (maximum) 3780pF @ 16V
    Continuous Drain Current Id 13.3A
    Vgs (th) (maximum) at different Ids 1V @ 250µA
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