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      RU3030M2 30V 30A PDFN3333 MOSFET diode triode The transistor

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      Shenzhen Yimaoxun Technology Co., Ltd.2 yrsCN
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      Key attributes

      Industry-specific attributes

      Model Number
      RU3030M2
      Type
      MOSFET 
      Brand Name
      YMX
      Package Type
      Surface Mount

      Other attributes

      Place of Origin
      Guangdong, China
      Package / Case
      1
      Application
      Microphone
      Supplier Type
      Original manufacturer, Agency, Retailer, Other
      Media Available
      datasheet, Photo, EDA/CAD Models, Other
      Brand
      MOS
      Current - Collector (Ic) (Max)
      1
      Voltage - Collector Emitter Breakdown (Max)
      1
      Vce Saturation (Max) @ Ib, Ic
      1
      Current - Collector Cutoff (Max)
      1
      DC Current Gain (hFE) (Min) @ Ic, Vce
      1
      Power - Max
      1
      Frequency - Transition
      1
      Resistor - Base (R1)
      1
      Resistor - Emitter Base (R2)
      1
      FET Type
      1
      FET Feature
      Silicon Carbide (SiC)
      Drain to Source Voltage (Vdss)
      1
      Current - Continuous Drain (Id) @ 25°C
      1
      Rds On (Max) @ Id, Vgs
      1
      Vgs(th) (Max) @ Id
      1
      Gate Charge (Qg) (Max) @ Vgs
      1
      Input Capacitance (Ciss) (Max) @ Vds
      1
      Frequency
      1
      Current Rating (Amps)
      1
      Noise Figure
      1
      Power - Output
      1
      Voltage - Rated
      1
      Drive Voltage (Max Rds On, Min Rds On)
      1
      Vgs (Max)
      1
      IGBT Type
      1
      Configuration
      Single
      Vce(on) (Max) @ Vge, Ic
      1
      Input Capacitance (Cies) @ Vce
      1
      Input
      1
      NTC Thermistor
      1
      Voltage - Breakdown (V(BR)GSS)
      1
      Current - Drain (Idss) @ Vds (Vgs=0)
      1
      Current Drain (Id) - Max
      1
      Voltage - Cutoff (VGS off) @ Id
      1
      Resistance - RDS(On)
      1
      Voltage
      1
      Voltage - Output
      1
      Voltage - Offset (Vt)
      1
      Current - Gate to Anode Leakage (Igao)
      1
      Current - Valley (Iv)
      1
      Current - Peak
      1
      Applications
      1

      Packaging and delivery

      Packaging Details
      NB
      Selling Units:
      Single item
      Single package size:
      0.1X0.1X0.1 cm
      Single gross weight:
      0.001 kg
      Show more

      Lead time

      Quantity (packs)1 - 10001001 - 100000100001 - 10000000 > 10000000
      Lead time (days)357To be negotiated

      Customization

      Customized logo
      Min. order: 1000000
      Customized packaging
      Min. order: 1000000
      Graphic customization
      Min. order: 1000000
      For more customization details, message supplier

      Product descriptions from the supplier

      99999 - 499999 packs
      $0.53
      500000 - 799999 packs
      $0.51
      800000 - 999999 packs
      $0.48
      >= 1000000 packs
      $0.47

      Quantity

      Shipping

      Item subtotal (0 variations 0 items)
      $0.00
      Shipping total
      $0.00
      Subtotal
      $0.00

      Membership benefits

      Quick refunds on orders under US $1,000View more

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