FDD86252 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD86252
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 89 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 27 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11.3 nC
Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm
Package: TO252
FDD86252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD86252 Datasheet (PDF)
fdd86252.pdf
May 2013FDD86252N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 52 m at VGS = 10 V, ID = 5 Aincorporates Shielded Gate technology. This process has been optimized for the on-state re
fdd86252.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd86250.pdf
December 2010FDD86250N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m at VGS = 10 V, ID = 8 ASemiconductors advanced Power Trench process that has Max rDS(on) = 31 m at VGS = 6 V, ID = 6.5 Abeen especially tailored to minimize the on-state resistance and yet maintain
fdd86250 f085.pdf
www.onsemi.comFDD86250_F085 (Note1)N-Channel Sheilded Gate PowerTrench MOSFET150 V, 50 A, 22 m Features Typical RDS(on) = 19.4 m at VGS = 10V, ID = 20 A Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A UIS CapabilityD RoHS Compliant Qualified to AEC Q101DGApplications Automotive Engine ControlSGD-PAK PowerTrain Management TO-252(TO-252) Solenoid
fdd86250.pdf
Isc N-Channel MOSFET Transistor FDD86250FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
Datasheet: FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 , 12N60 , HUF75842P3 , HUF75852G3 , HUFA75307T3ST , HUFA75321D3S , HUFA75344S3 , HUFA75639S3S , FDD86110 , HUFA76407DK8TF085 .
