NCE55P04S MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE55P04S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 5.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.054(typ) Ohm
Package: SO8
NCE55P04S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE55P04S Datasheet (PDF)
nce55p04s.pdf
Pb Free Producthttp://www.ncepower.com NCE55P04SNCE P-Channel Enhancement Mode Power MOSFET Description D1D2The NCE55P04S uses advanced trench technology and G1 G2design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S1 S2Schematic diagram General Features VDS =-55V,ID =-4A RDS(ON)
nce55p04s.pdf
NCE55P04Swww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V
nce55p05s.pdf
http://www.ncepower.com NCE55P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)
nce55p05s.pdf
NCE55P05Swww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.050RDS(on) () at VGS = -4.5 V 0.060ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAME
nce55p15k.pdf
Pb Free Producthttp://www.ncepower.com NCE55P15KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)
nce55p15i.pdf
Pb Free Producthttp://www.ncepower.com NCE55P15INCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)
nce55p30.pdf
Pb Free Producthttp://www.ncepower.com NCE55P30NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)
nce55p30k.pdf
Pb Free Producthttp://www.ncepower.com NCE55P30KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , RFP50N06 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
