All MOSFET. 2SJ652-1E Datasheet

 

2SJ652-1E MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SJ652-1E
   Marking Code: J652
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 30 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: 1.2 V
   Maximum Drain Current |Id|: 28 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 80 nC
   Rise Time (tr): 210 nS
   Drain-Source Capacitance (Cd): 470 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.038 Ohm
   Package: TO220F

 2SJ652-1E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ652-1E Datasheet (PDF)

 ..1. Size:217K  sanyo
 2sj652-1e.pdf

2SJ652-1E 2SJ652-1E

2SJ652Ordering number : EN7625ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ652ApplicationsFeatures ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 V

 8.1. Size:47K  sanyo
 2sj652.pdf

2SJ652-1E 2SJ652-1E

Ordering number : ENN76252SJ652P-Channl Silicon MOSFET2SJ652General-Purpose Switching Device ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ652] Motor drive, DC / DC converter.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.

 8.2. Size:255K  onsemi
 2sj652.pdf

2SJ652-1E 2SJ652-1E

Ordering number : EN7625A2SJ652P-Channel Power MOSFEThttp://onsemi.com 60V, 28A, 38m , TO-220F-3SGFeatures ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20

 9.1. Size:33K  sanyo
 2sj650.pdf

2SJ652-1E 2SJ652-1E

Ordering number : ENN75002SJ650P-Channl Silicon MOSFET2SJ650DC / DC Converter ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ650]4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220MLAbsolute Maximum Ratings

 9.2. Size:38K  sanyo
 2sj651.pdf

2SJ652-1E 2SJ652-1E

Ordering number : EN7501A 2SJ651P-Channel Silicon MOSFET2SJ651DC / DC Converter ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Curr

 9.3. Size:46K  sanyo
 2sj656.pdf

2SJ652-1E 2SJ652-1E

Ordering number : ENN76842SJ656P-Channl Silicon MOSFET2SJ656General-Purpose Switching DeviceFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ656]4.5 Motor drive, DC / DC converter.10.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.55 2.55SANY

 9.4. Size:42K  sanyo
 2sj655.pdf

2SJ652-1E 2SJ652-1E

Ordering number : EN7712A 2SJ655SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ655ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings Un

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top