| BSC057N08NS3 G | ||
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| 产品描述：
BSC057N08NS3 G , N沟道 MOSFET 晶体管, 100 A, Vds=80 V, 8针 TDSON封装
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Width: | 6.1 mm |
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| Rds On - Drain-Source Resistance: | 5.7 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TDSON-8 |
| Height: | 1.1 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 16 ns |
| Forward Transconductance - Min: | 80 S, 40 S |
| Series: | OptiMOS 3 |
| Factory Pack Quantity: | 5000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 32 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Type: | OptiMOS 3 Power-Transistor |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Qg - Gate Charge: | 56 nC |
| Pd - Power Dissipation: | 2.5 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Configuration: | Single Quad Drain Triple Source |
| Mounting Style: | SMD/SMT |
| Fall Time: | 9 ns |
| Length: | 5.35 mm |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSC057N08NS3GATMA1 BSC057N08NS3GXT SP000447542 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 100 A |
| Rise Time: | 14 ns |
| Transistor Type: | 1 N-Channel |
| 数据手册： |
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