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US006211090B1

(12) United States Patent ao) Patent No.: us 6,211,090 Bi

Durlam et al. (45) Date of Patent: Apr. 3,2001

(54) METHOD OF FABRICATING FLUX

CONCENTRATING LAYER FOR USE WITH
MAGNETORESISTIVE RANDOM ACCESS
MEMORIES

5,786,275 * 7/1998 Kubo 216/38 X

5,861,328 1/1999 Tehrani et al 438/210

5,902,690 5/1999 Tracy et al 428/693

5,990,011 * 11/1999 McTeer 216/38 X

(75) Inventors: Mark Durlam, Chandler; Eugene Youjun Chen, Gilbert; Saied N. Tehrani; Jon Michael Slaughter, both of Tempe; Gloria Kerszykowski, Fountain Hills; Kelly Wayne Kyler, Mesa, all of AZ (US)

(73) Assignee: Motorola, Inc., Schaumburg, IL (US)

( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.

(21) Appl. No.: 09/528,971

(22) Filed: Mar. 21, 2000

(51) Int. C I. 110II. 21/00

(52) U.S. CI 438/692; 216/22; 216/38;

438/741; 438/745; 438/754

(58) Field of Search 438/3, 131, 626,

438/631, 637, 645, 672, 692, 737, 741, 745, 754, 756, 757; 216/18, 22, 38, 88, 100; 365/98, 158, 171

(56) References Cited

U.S. PATENT DOCUMENTS

5,498,561 * 3/1996 Sakuma et al 216/22 X

[blocks in formation]

A method of fabricating a flux concentrator for use in magnetic memory devices including the steps of providing at least one magnetic memory bit (10) and forming proximate thereto a material stack defining a copper (Cu) damascene bit line (56) including a flux concentrating layer (52). The method includes the steps of depositing a bottom dielectric layer (32), an optional etch stop (34) layer, and a top dielectric layer (36) proximate the magnetic memory bit (10). A trench (38) is etched in the top dielectric layer (36) and the bottom dielectric layer (32). A first barrier layer (42) is deposited in the trench (38). Next, a metal system (29) is deposited on a surface of the first barrier layer (42). The metal system (29) includes a copper (Cu) seed material (44), and a plated copper (Cu) material (46), a first outside barrier layer (50), a flux concentrating layer (52), and a second outside barrier layer (54). The metal system (29) is patterned and etched to define a copper (Cu) damascene bit line (56).

20 Claims, 5 Drawing Sheets

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