A non-volatile semiconductor device includes an n type well formed in a semiconductor substrate having a surface, the surface having a plurality of stripe shaped grooves and a plurality of stripe shaped ribs, a plurality of stripe shaped p type diffusion regions formed in upper parts of each of the plurality...http://www.google.com.hk/patents/US8106443?utm_source=gb-gplus-share專利 US8106443 - Non-volatile semiconductor memory device
