A semiconductor memory device includes a first memory cell block capable of rewriting data and having at least one first memory cell, and a second memory cell block capable of rewriting data and having at least one second memory cell adjoining the first memory cell. A data writing method for the semiconductor...http://www.google.com.hk/patents/US6870773?utm_source=gb-gplus-share專利 US6870773 - Data writing method for semiconductor memory device and semiconductor memory device
