A method for forming a metal-to-metal antifuse disposed above and insulated from a semiconductor substrate is disclosed. The method comprises forming a first metal layer disposed above and insulated from the semiconductor substrate; forming a layer of antifuse material over and in electrical contact...http://www.google.com.hk/patents/US6713369?utm_source=gb-gplus-share專利 US6713369 - Antifuse incorporating tantalum nitride barrier layer
