The interconnect system of the present invention is comprised of a TiW metal barrier layer as well as a Ti metal barrier layer deposited on the silicon surface. An anisotropic etch process for the Ti/TiW/Al metal sandwich has also been developed without corrosion and metal residue. The addition of the...http://www.google.com.hk/patents/US5238872?utm_source=gb-gplus-share專利 US5238872 - Barrier metal contact architecture
