In forming a metal or metal silicide film by CVD, a fluoro-silane is used as a reaction gas, or a fluoro-silane is added to a source gas. Examples of the metal halide used in the present invention include fluorides and chlorides of tungsten, molybdenum, titanium, tantalum and niobium. Among them, fluorides...http://www.google.com.hk/patents/US5177589?utm_source=gb-gplus-share專利 US5177589 - Refractory metal thin film having a particular step coverage factor and ratio of surface roughness