Structures and methods for memory cells having a volatile and a non-volatile component in a single memory cell are provided. The memory cell includes a first source/drain region and a second source/drain region separated by a channel region in a substrate. A storage capacitor is coupled to one of the...http://www.google.com.hk/patents/US6754108?utm_source=gb-gplus-share專利 US6754108 - DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
