A method of manufacturing a memory device includes defining a field region and an active region in a substrate, forming a field oxide layer on the field region, forming an insulating layer on the active region, patterning the insulating layer to form first and second bit lines separated from and parallel...http://www.google.com.hk/patents/US7407856?utm_source=gb-gplus-share專利 US7407856 - Method of manufacturing a memory device
