A process for fabricating a high density memory array. N-type impurities are implanted in a p-type substrate to form continuous rails of diffusion that have a substantially flat contour. Each rail of diffusion defines a corresponding bit line. Each rail defines the source and drain region of each...http://www.google.com.hk/patents/US5672892?utm_source=gb-gplus-share專利 US5672892 - Process for making and programming a flash memory array
