A non-volatile memory located on a substrate is provided. The non-volatile memory includes a tunnel layer, a charge trapping composite layer, a gate and a source/drain region. The tunnel layer is located on the substrate, the charge trapping composite layer is located on the tunnel layer and the gate...http://www.google.com.hk/patents/US7772072?utm_source=gb-gplus-share專利 US7772072 - Method for manufacturing non-volatile memory
