Memory devices are described along with manufacturing methods. An embodiment of a memory device as described herein includes a bottom electrode, a thermal protect structure on the bottom electrode, and a multi-layer stack on the thermal protect structure. The thermal protect structure comprises a layer...http://www.google.com.hk/patents/US20090122588?utm_source=gb-gplus-share專利 US20090122588 - PHASE CHANGE MEMORY CELL INCLUDING A THERMAL PROTECT BOTTOM ELECTRODE AND MANUFACTURING METHODS
