A process for fabricating a MOSFET device has been developed featuring a polycide gate structure, comprised of a metal silicide component, overlying a polysilicon component, and with the metal silicide shape intentionally fabricated to be narrower than the underlying polysilicon shape. This polycide...http://www.google.com.hk/patents/US5994192?utm_source=gb-gplus-share專利 US5994192 - Compensation of the channel region critical dimension, after polycide gate, lightly doped source and drain oxidation procedure
