A method of fabricating a memory array, while protecting it from charge damage. Bitlines that may have source/drain regions of memory cells are formed in a substrate. Wordlines are formed above the bitlines and may have gate regions. Next, a first metal region that is coupled to one of the bitlines is...http://www.google.com.hk/patents/US6897110?utm_source=gb-gplus-share專利 US6897110 - Method of protecting a memory array from charge damage during fabrication
