A method for implementing a self-aligned metal silicide gate is achieved by confining amorphous silicon within a recess overlying a channel and annealing to cause the amorphous silicon with its overlying metal to interact to form the self-aligned metal silicide gate. A gate dielectric layer formed of...http://www.google.com.hk/patents/US6368950?utm_source=gb-gplus-share專利 US6368950 - Silicide gate transistors
