The present invention provides a method for forming a silicon nitride spacer by using an atomic layer deposition (ALD) method. The procedure of the ALD is to use a first kind of excess gas as a reactant air and thus produce a first mono-layer solid phase of the first reactant air on the wafer. When the...http://www.google.com.hk/patents/US6638879?utm_source=gb-gplus-share專利 US6638879 - Method for forming nitride spacer by using atomic layer deposition
