Disclosed are methods of forming transistors. In one embodiment, the transistors are formed by forming a plurality of elliptical bases in a substrate and forming fins form the elliptical bases. The transistors are formed within the fin such that they may be used as access devices in a memory array....http://www.google.com.hk/patents/US20100323481?utm_source=gb-gplus-share專利 US20100323481 - SYSTEMS AND DEVICES INCLUDING MULTI-GATE TRANSISTORS AND METHODS OF USING, MAKING, AND OPERATING THE SAME
