A memory cell with a stored charge on its gate, comprising (A) a channel forming region, (B) a first gate formed on an insulation layer formed on the surface of the channel forming region, the first gate and the channel forming region facing each other through the insulation layer, (C) a second gate...http://www.google.com.hk/patents/US6104639?utm_source=gb-gplus-share專利 US6104639 - Memory cell with stored charge on its gate and process for the manufacture thereof
