A floating gate transistor has a reduced barrier energy at an interface between a gallium nitride (GaN) or gallium aluminum nitride (GaAlN) floating gate an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate....http://www.google.com.hk/patents/US6307775?utm_source=gb-gplus-share專利 US6307775 - Deaprom and transistor with gallium nitride or gallium aluminum nitride gate
