A quantum effect switching device comprising a substrate 12, first and second tunnel barriers 14 and 18, and a quantum well 16. The current between a drain region 20 and the substrate 12 can be switched by placing a potential on a gate layer 24. The potential on the gate layer 24 selectively modulates...http://www.google.com.hk/patents/US5646418?utm_source=gb-gplus-share專利 US5646418 - Quantum effect switching device
