An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. After forming the first monolayer,...http://www.google.com.hk/patents/US7150789?utm_source=gb-gplus-share專利 US7150789 - Atomic layer deposition methods
