A plasma etch process is described for simultaneously removing photoresist and etch residues, such as silicon oxide residues, remaining on a substrate from a prior polysilicon and/or polycide etch. The process comprises: (a) generating radicals in a plasma generator upstream of an etch chamber, from...http://www.google.com.hk/patents/US5382316?utm_source=gb-gplus-share專利 US5382316 - Process for simultaneous removal of photoresist and polysilicon/polycide etch residues from an integrated circuit structure
