Method is provided for controlling the concentration of a dopant introduced into an epitaxial film during CVD or sublimation growth by controlling the energy of dopant atoms impinging on the film in a supersonic beam. Precursor materials may also be introduced by supersonic beam. Energy of the dopant...http://www.google.com.hk/patents/US6015459?utm_source=gb-gplus-share專利 US6015459 - Method for doping semiconductor materials
