A method of fabricating a trench on an integrated circuit having first and second insulative layers includes providing a layer of material over the insulative layers; forming a first self-assembled monolayer on the layer of material; etching the first self-assembled monolayer to form an aperture in the...http://www.google.com.hk/patents/US6703304?utm_source=gb-gplus-share專利 US6703304 - Dual damascene process using self-assembled monolayer and spacers
