Nonvolatile memory device and a method of programming the same, is disclosed, wherein, for single level or multi-level programming of a cell, predetermined voltages are applied to a control gate, source and drain respectively for varying a charge amount in the floating gate. A channel in a transistor...http://www.google.com.hk/patents/US6034892?utm_source=gb-gplus-share專利 US6034892 - Nonvolatile memory cell and method for programming and/or verifying the same
