A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and...http://www.google.com.hk/patents/US7321130?utm_source=gb-gplus-share專利 US7321130 - Thin film fuse phase change RAM and manufacturing method
