A method of increasing the surface area of a STC structure, used for high density, DRAM devices, has been developed. The process consists of creating multiple, narrow crevices in a polysilicon, bottom electrode structure. This is accomplished by initially depositing a discontinuous layer...http://www.google.com.hk/patents/US5679596?utm_source=gb-gplus-share專利 US5679596 - Spot deposited polysilicon for the fabrication of high capacitance, DRAM devices 
