Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques to facilitate formation of a high-purity aluminum oxide layer. A dopant material is embedded in the pores...http://www.google.com.hk/patents/US6774050?utm_source=gb-gplus-share專利 US6774050 - Doped aluminum oxide dielectrics
