One aspect of the present invention relates to a non-volatile semiconductor memory device, containing a substrate, the substrate having a core region and a periphery region; a charge trapping dielectric over the core region of the substrate; a gate dielectric in the periphery region of the substrate;...http://www.google.com.hk/patents/US6541816?utm_source=gb-gplus-share專利 US6541816 - Planar structure for non-volatile memory devices
