BVCEO > 50V. •. IC = 3A Continuous Collector Current. •. ICM = 6A Peak Pulse Current. •. RCE(SAT) = 75mΩ for a Low Equivalent On-Resistance.
DESCRIPTION. This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly ...
Order today, ships today. ZXT10N50DE6TA – Bipolar (BJT) Transistor NPN 50 V 3 A 165MHz 1.1 W Surface Mount SOT-23-6 from Diodes Incorporated.
This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on ...
Size:350K diodes zxt10n50de6.pdf. ZXT10N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 50V Case: SOT26 IC = 3A ...
ZXT10N50DE6 SuperSOT™ 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A DESCRIPTION This new 4th generation ultra ...
ZXT10N50DE6 - Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V NPN Low Sat Transistor 50V NPN SILICON LOW SATURATION ...
A$4.00
20PCS/50PCS/100PCS/1000PCS New original ZXT10N50DE6TA ZXT10N50DE6 「TRANS NPN 50V 3A SOT23-6」 silk screen 619 · Shipping: AU$7.10 · Estimated delivery between · ...
Datasheet, Description. logo. Zetex Semiconductors, ZXT10N50DE6 · ZETEX-ZXT10N50DE6 Datasheet 223Kb / 6P, 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR.
