3.6. A. TC = 100 °C. 2.3. Pulsed drain current a, e. IDM. 14. Linear derating factor. 0.69. W/°C. Single pulse avalanche energy b.
SIHFBC30-E3 Datasheet(PDF) - Vishay Siliconix - Alldatasheet.com
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Part #: SIHFBC30-E3. Download. File Size: 780Kbytes. Page: 8 Pages. Description: Power MOSFET. Manufacturer: Vishay Siliconix.
SiHFBC30-E3. SnPb. IRFBC30. SiHFBC30. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS.
IRFBC30S,L, SiHFBC30S,L Datasheet by Vishay Siliconix · 1. Dimensioning and tolerancing per ASME Y14. · 2. Dimensions are shown in millimeters (inches). · 3.
SIHFBC30 MOSFET. Datasheet pdf. Equivalent. Type Designator: SIHFBC30 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation ( ...
SiHFBC30-E3. SnPb. IRFBC30. SiHFBC30. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted. PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS.
SIHFBC30-E3 · VBSEMI-SIHFBC30-E3 Datasheet 1Mb / 9P, N-Channel 650 V (D-S) MOSFET. More results. Similar Description - SIHFBC30-E3. Manufacturer, Part # ...
SiHFBC30 Datasheet PDF - Vishay Siliconix - Datasheets PDF
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IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 17 ...
IRFBC30 MOSFET. Datasheet pdf. Equivalent. Type Designator: IRFBC30 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): ...