Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding ...
SPD50N03S2-07 ; Input Capacitance (Ciss) (Max) @ Vds. 2170 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 136W (Tc) ; Operating Temperature. -55°C ~ 175°C ( ...
1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see app.
Apr 16, 2024 · SPD50N03S2-07 G. SP-Number: SP000443920. ISP-Name: SPD50N03S2-07 G. Package: PG-TO252-3. Calculated average failure rate (AFR): tested devices ...
Part #: SPD50N03S2-07. Download. File Size: 1020Kbytes. Page: 8 Pages. Description: N-Channel 30-V (D-S) MOSFET. Manufacturer: VBsemi Electronics Co.,Ltd.
1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see app.
Specifications ; Transistor Polarity: N-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 30 V ; Id - Continuous Drain Current: 50 A.
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SPD50N03S2-07 G PG-TO252-3 MOSFET N-CH 30V 50A TO252-3 ; Current - Continuous Drain (Id) @ 25 C · 50A ; Rds On (Max) @ Id Vgs, 7.3 mOhm @ 50A 10V ; Vgs(th) (Max) @ ...
Part #, SPD50N03S2-07G. Download, SPD50N03S2-07G Click to download. File Size, 647.54 Kbytes. Page, 9 Pages. Manufacturer, INFINEON [Infineon Technologies ...
1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see app.