Apr 13, 2016 · 7 Drain-source on-state resistance. 8 Typ. transfer characteristics. R DS(on)=f(T j); I D=3.8 A; V GS=10 V.
SPD06N80C3 Infineon Technologies MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3 datasheet, inventory, & pricing.
Low specific on-state resistance (RDS(on)*A); Very low energy storage in output capacitance (Eoss) @400V; Low gate charge (Qg); Fieldproven CoolMOS™ quality ...
Oct 5, 2005 · 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² ...
$2.39
SPD06N80C3 Infineon Technologies $2.3912 - 800V 6A 83W 900mΩ@10V,3.8A 3.9V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS datasheet, price, ...
Buy SPD06N80C3 N-CH 800V 6A 900mOhm TO252 from INFINEON on Rutronik24. | Get price and stock infos ✓ lead time ✓ datasheets ✓ and parameters ✓.
Part #: SPD06N80C3. Download. File Size: 631Kbytes. Page: 10 Pages. Description: CoolMOSTM Power Transistor. Manufacturer: Infineon Technologies AG.
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SPD06N80C3. Effective Inventory8,238. Featuring a robust design, the SPD06N80C3 MOSFET is ideal for high-voltage applications, supporting up to 800 ...
$3.59
This item can be returned in its original condition for a full refund or replacement within 30 days of receipt. You may receive a partial or no refund on ...