Sep 20, 2011 · SPB20N60C3. CoolMOS™ Power Transistor. VDS @ Tjmax. 650. V. RDS(on). 0.19. Ω. ID. 20.7. $. Feature. • New revolutionary high voltage technology.
Low specific on-state resistance (RDS(on)*A); Very low energy storage in output capacitance (Eoss) @400V; Low gate charge (Qg); Fieldproven CoolMOS™ quality ...
In stock
Order today, ships today. SPB20N60C3ATMA1 – N-Channel 600 V 20.7A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2 from Infineon Technologies.
Sep 14, 2005 · SPB20N60C3. Cool MOS™ Power Transistor. VDS @ Tjmax. 650. V. RDS(on). 0.19. Ω. ID. 20.7. A. Feature. • New revolutionary high voltage technology.