30-day returns
RQA0009SXAQS#H1 ; Input Capacitance (Ciss) (Max) @ Vds. 76 pF @ 0 V ; FET Feature. - ; Power Dissipation (Max). 15W (Tc) ; Operating Temperature. 150°C.
Jun 28, 2011 · RQA0009SXAQS. Silicon N-Channel MOS FET. Features. • High Output Power, High Gain, High Efficiency. Pout = +37.8 dBm, Linear Gain = 18 dB, PAE ...
2.00Silicon N-Channel MOS FET Jun 30, 2011Features High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) ...