Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-26(SM6)｜Find data sheet and product information.

RN2606(TE85L,F) ; Detailed Description. Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6 ; Datasheet.

Part #: RN2606. Download. File Size: 452Kbytes. Page: 7 Pages. Description: Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications.

RN2606(TE85L,F) ; Package / Case, SM-6 ; DC Collector/Base Gain hfe Min, 80 ; Maximum Operating Frequency, 200 MHz ; Collector- Emitter Voltage VCEO Max, - 50 V.

RN2601~RN2606. 2001-06-05. 1. TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process). RN2601,RN2602,RN2603. RN2604,RN2605,RN2606. Switching, Inverter ...

RN2606 Datasheet, Equivalent, Cross Reference Search. Type Designator: RN2606 SMD Transistor Code: YF Material of Transistor: Si Polarity: Pre-Biased-PNP

Jun 25, 2019 · RN2605, RN2606. −0.5. ―. −0.8. Transition frequency. RN2601 to RN2606. fT. VCE = −10 V,. IC = −5 mA. ―. 200. ―. MHz. Collector output.

Transistors,RN2606 Price - RN2606 in stock - RN2606 Data sheet - RN2606 Picture - Buy RN2606 on Utsource.net.

RN2606 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A 0.3W R1=4.7KΩ R2=47KΩ SOT-163/SM6/SOT23-6 marking YF switching inverting interface driver circuit.