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Specifications ; DC Collector/Base Gain hfe Min: 50 ; Collector- Emitter Voltage VCEO Max: - 50 V ; Continuous Collector Current: - 100 mA ; Pd - Power Dissipation:
RN2115,LF(CT ; Transistor Type. PNP - Pre-Biased ; Current - Collector (Ic) (Max). 100 mA ; Voltage - Collector Emitter Breakdown (Max). 50 V ; Resistor - Base (R1).
Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/10 kΩ, SOT-416(SSM)｜Find data sheet and product information.
Mar 27, 2024 · RN2115,LXHF(CT Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=2.2kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-416) datasheet, ...
RN2115F Datasheet, Equivalent, Cross Reference Search. Type Designator: RN2115F. SMD Transistor Code: XS_YS. Material of Transistor: Si.
RN2115,LXHF(CT ; Package / Case, SSM-3 ; DC Collector/Base Gain hfe Min, 50 at - 10 mA, - 5 V ; Maximum Operating Frequency, 200 MHz ; Collector- Emitter Voltage ...
10.2 RN2115 IC-VI(ON). Fig. 10.3 RN2116 IC-VI(ON). Fig. 10.4 RN2117 IC-VI(ON). Fig. 10.5 RN2118 IC-VI(ON). 2021-08-30. Rev.2.0. ©2021. Toshiba Electronic ...
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RN2115,LF(CT ; Mounting Type, Surface Mount ; Package/Case, SC-75, SOT-416 ; Supplier Device Package, SSM ; Base Product Number, RN2115 ; RoHS Status, RoHS Compliant.
Part information ; RN2115F, 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. Specifications: Polarity: PNP ; Package Type: ESM, 2-2HA1A, 3 PIN Category: Discrete ...
ROTOR DISC » RN2115 ; Drum Ø: 148 ; Structure Material. G3000 ; Disc Thickness (Max). 10 ; Centering Diameter. 76 ; Front/Rear. Rear.