The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts ...
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PTB20006 ~ ERICSSON ~ RF Power Transistor ~ 860-900MHZ 4W ~ NOS ; Item Number. 386528099000 ; Charity. 10.0% will support The Michael J. Fox Foundation for ...
4 Watts, 860–900 MHz Cellular Radio RF Power Transistor · PTB20006 datasheet pdf Ericsson Microelectronics Download PTB20006 datasheet from
PTB20006 Datasheet, Equivalent, Cross Reference Search. Type Designator: PTB20006 Material of Transistor: Si Polarity: NPN
The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency.
PTB20006 - 4 Watts, 86000 MHz Cellular Radio RF Power Transistor 4 Watts, 860-900 MHz Cellular Radio RF Power Transistor 4 Watts/ 860-900 MHz Cellular Radio ...
e PTB 20006 4 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20006 is a class AB, NPN, common emitter RF power transistor intended ...
Relay Hot Selling IC CHIP PTB20006 In Stock hot ; Trade Assurance. Built-in order protection service in alibaba.com. Product quality. On-time shipment. More on ...
the PTB20006 is a silicon NPN class AB, common emitter RF power transistor intended for 25Vdc operation across the 860 to 900MH...
Searched Keyword: SILICON-POWER. Part #: PTB20006. Datasheet: 44Kb/3P. Description: 4 Watts, 860-900 MHz Cellular Radio RF Power Transistor.