Detailed Description. Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 ; Datasheet. Datasheet ...

Technical. Collector Emitter Breakdown Voltage, 50 V. Collector Emitter Voltage (VCEO), 250 mV. Continuous Collector Current, 100 mA. Current Rating, 100 mA.

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) ...

Specifications ; Mounting Style: SMD/SMT ; Package / Case: SOT-563-6 ; DC Collector/Base Gain hfe Min: 160 ; Collector- Emitter Voltage VCEO Max: 50 V.

Part Number: NSBC114TPDXV6T1; Manufacturer Name: ON Semiconductor; Description: TRANS PREBIAS NPN/PNP SOT563; Category: BJT - Arrays, Pre-Biased; Status: ...

Part Number: NSBC114TPDXV6T1 ; Manufacturer/Brand: AMI Semiconductor / ON Semiconductor ; Product Description: TRANS PREBIAS NPN/PNP SOT563 ; Datasheets: ...

NSBC114TPDXV6T1 chip product,TRANS PREBIAS NPN/PNP SOT563,Application service for,Its price is 0.09,and its length,width and height are 1mm,1mm and 1mm ...

Buy NSBC114TPDXV6T1 - Onsemi - EACH. Farnell UK offers fast quotes, same day dispatch, fast delivery, wide inventory, datasheets & technical support.

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base.

Find detailed technical data and specifications for the NSBC114EPDXV6T1 electronic component in datasheet PDF at Utmel.