DESCRIPTION. The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets.
The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power. amplifier for 3.2 V GSM 900 handsets.
NEC's NE5520379A is an N-Channel silicon power MOSFET ... (TA = 25 °C). SYMBOLS. PARAMETERS. UNITS. RATINGS. VDS ... Duty Cycle ≤ 50%, Ton ≤ 1 s. TYPICAL ...
DESCRIPTION. The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V ...
The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power. amplifier for 3.2 V GSM 900 handsets.
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The NE5520379A-T1A-A from CEL is an obsolete (EOL) electronic component. It has a medium popularity and a fake threat in the open market of 67%.
The NE5520379A RF Power MOSFET is only supported for customers who have already adopted these products.
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The NE5520379A is an N-channel silicon power MOS ... ABSOLUTE MAXIMUM RATINGS (TA = +25°C). Parameter ... ELECTRICAL CHARACTERISTICS (TA = +25°C). Parameter.
NE5520379A. TYPICAL CHARACTERISTICS (TA = +25. °°°°C). VDS = 3.2 V. IDset = 600 mA. f = 915 MHz. Pout. ID. Input Power Pin (dBm). OUTPUT POWER, DRAIN CURRENT.
NE5520279A. ABSOLUTE MAXIMUM RATINGS! (ta = 25 °c). RECOMMENDED OPERATING LIMITS. SYMBOLS PARAMETERS UNITS | RATINGS Vps Drain Supply Voltage V 8.5 Vas ...