Specifications ; Gate-Source Cutoff Voltage: - 700 mV ; NF - Noise Figure: 0.45 dB ; P1dB - Compression Point: 11 dBm ; Product: RF JFET Transistors.
Missing: T1- | Show results with:T1-
NE3510M04 Hetero Junction Field Effect Transistor . FEATURES. Low noise figure and high associated gain 0.45 dB TYP., 16 dB TYP. GHz, VDS 0.35 dB TYP., ...
Rating
NE3510M04-A ; Gain: 16 dB ; Transistor Polarity: N-Channel ; Vds - Drain-Source Breakdown Voltage: 4 V ; Vgs - Gate-Source Breakdown Voltage: - 3 V ; Id - Continuous ...
Rating
(60)
The NE3510M04-T2-A is an RF Mosfet HFET from CEL that comes in an M04 case. It has a voltage of 2 V and can handle a continuous forward current of 80mA. The ...
NE3510M04-T2-A CEL RF JFET Transistors L-S Band Lo No Amp datasheet, inventory, & pricing.
Missing: T1- | Show results with:T1-
$68.00
NE3510M04-A ; Gain : 16 dB ; Noise Figure : 0.45 dB ; Forward Transconductance gFS (Max / Min) : 70 mS ; Drain Source Voltage VDS : 4 V ; Gate-Source Breakdown ...
NE3510M04. GaAs HJ-FET. 0.35 @ 2.0GHz. 19.0 @ 2.0GHz. +12.0. M04. (See data tables ... NE3510M04. 0.6. 280. 2. 2.0. 10. 0.35. 19.0. 70. 3.0. 30. +12.0. M04.
The NE3510M04-07-T2-A is RF MOSFET, buy NE3510M04-07-T2-A from Renesas Technology Corp at Ovaga Technologies ... NESG250134-T1-AZ. Renesas Technology Corp.
Find where to buy NE3510M04, NE3510M04-A . We are supplier agent between buyers ... NE3510M04-T1-A. A-grade Electronics Company. 2130, 15, RENESAS/, SOT-343. Depu ...
