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NDS0610 ; Current - Continuous Drain (Id) @ 25°C · 120mA (Ta) ; Drive Voltage (Max Rds On, Min Rds On). 4.5V, 10V ; Rds On (Max) @ Id, Vgs. 10Ohm @ 500mA, 10V ; Vgs( ...

This very high density process has been designed to minimize on−state resistance, provide rugged and reliable performance and fast switching. They can be used, ...

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Number of Channels: 1 Channel. Vds - Drain-Source Breakdown Voltage: 60 V. Id - Continuous Drain Current: 120 mA. Rds On - Drain-Source Resistance: 10 Ohms. Vgs ...

This P-Channel enhancement mode field effect transistors is produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

$9.99 2-day delivery 30-day returns

Specifications ; Vds - Drain-Source Breakdown Voltage: 60 V ; Id - Continuous Drain Current: 120 mA ; Rds On - Drain-Source Resistance: 10 Ohms ; Vgs - Gate-Source ...

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NDS0610-G ; Current - Continuous Drain (Id) @ 25°C · 120mA (Ta) ; Drive Voltage (Max Rds On, Min Rds On). 4.5V, 10V ; Rds On (Max) @ Id, Vgs. 10Ohm @ 500mA, 10V.

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Buy NDS0610 with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other MOSFETs.

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This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used, ...