VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V. • Double-data-rate architecture; two data transfers per clock cycle. • Bidirectional data strobe [DQS] (x4,x8) ...
Part #: K4H561638N-LCB3 ; Part Category: Memory ICs ; Manufacturer: Samsung Semiconductor Division ; Description: DDR1 DRAM, 16MX16, 0.7ns, CMOS, PDSO66.
Quest Components carries K4H561638N-LCB3 Integrated Circuits from SAMSUNG SEMICONDUCTOR INC. Same day shipping on all in stock parts.
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II. K4H561638N-LCB3. +1 more. Manufacturer: Samsung Electronics. Date Code: 1034 RoHS: Yes.