Characteristics, Symbol, Condition, Value, Unit. Capacitance Ratio (Typ.) CT(1)/CT(2), -, 3, -. Capacitance (case 1) (Max), CT(upper_side), VR=1V, 19.3, pF.
Characteristics, Symbol, Condition, Value, Unit. Capacitance Ratio (Typ.) CT(1)/CT(2), -, 3, -. Capacitance (case 1) (Max), CT(upper_side), VR=1V, 19.3, pF.
Part #: JDV2S08S. Download. File Size: 89Kbytes. Page: 3 Pages. Description: VCO for UHF Band Radio. Manufacturer: Toshiba Semiconductor.
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio, JDV2S08S datasheet pdf TOSHIBA Download JDV2S08S datasheet from. TOSHIBA, pdf
JDV2S08S Toshiba America Electronic Components ; 7.94% · 11 · 31.5 pF · SILICON · VARIABLE CAPACITANCE DIODE ; 5.46% · 2.8 · 18.3 pF · SILICON · VARIABLE CAPACITANCE ...
JDV2S08S - VCO for UHF Band Radio ; PART, Description, Maker ; KDV240E, VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO) 变容二极管 ...
JDV2S08S Toshiba are new and original and in stock for sale with 180 days warranty! view product specifications of Integrated Circuits (ICs) and datasheet ...
JDV2S08S. 2002-01-23. 1. TOSHIBA DIODE Silicon Epitaxial Planar Type. JDV2S08S. VCO for UHF Band Radio. · High Capacitance Ratio : C1V/C4V = 3.0 (typ.) · Low ...
JDV2S08S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S08S VCO for UHF Band Radio · · · High Capacitance Ratio : C1V/C4V = 3. 0 (typ. ) Low Series Resistance ...
Model Number: JDV2S08S MT9042CP ; Voltage - Breakdown: 1700V,standard ; Cross Reference: standard ; Power (Watts):, standard ; Frequency Bands (Low / High): ...