VCES. TJ. = 25°C to 150°C. 1000. V. VCGR. TJ. = 25°C to 150°C; RGE = 1 MΩ. 1000. V. VGES. Continuous. ±20. V. VGEM. Transient. ±30. V. IC25. TC = 25°C.
IXGH 15N120BD1. IXGT 15N120BD1. IXGH 15N120CD1. IXGT 15N120CD1. TO-247 AD (IXGH) Outline. Dim. Millimeter. Inches. Min. Max. Min. Max. A. 19.81 20.32 0.780 ...
IXGH 25 N120. 1200 V 50 A. 3 V. High speed IGBT. IXGH 25 N120A. 1200 V 50 A. 4 V. Features l. International standard package. JEDEC TO-247 AD l. 2nd generation ...
IXGH 60N60C2. IXGT 60N60C2. IXYS MOSFETs and IGBTs are covered by one or more ... IXGH 60N60C2. IXGT 60N60C2. Fig. 2. Extended Output Characteristics. @ 25 deg. C.
TO-247 (IXGH). Features. zVery high frequency IGBT. zSquare RBSOA. zHigh current handling capability. zMOS Gate turn-on. - drive simplicity. Applications. zPFC ...
IXGH/IXGM 40 N60. 600 V 75 A 2.5 V. High speed IGBT. IXGH/IXGM 40 N60A. 600 V 75 A 3.0 V. G. C. E. Symbol. Test Conditions. Maximum Ratings. VCES. TJ. = 25°C to ...
IXGH 24N170. IXGT 24N170. C (TAB). G = Gate,. C = Collector,. E = Emitter,. TAB ... IXGH 24N170. IXGT 24N170. TO-268 Outline. Dim. Millimeter. Inches. Min. Max.
IXGH 41N60. V. CES. = 600 V. I. C25. = 76 A. V. CE(sat). = 1.6 V. Symbol. Test ... IXGH 41N60. IXYS MOSFETS and IGBTs are covered by one or more of the following ...
IXGH messages. Parent topic: IXG messages.
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Littelfuse IGBT series IXGH/IXXH/IXYH. insulated-gate bipolar transistors (IGBTs); in a TO247AD housing; GenX3™ / GenX4™ / XPT™. IXGH 32 N 170 IXGH 32 N 170 ...